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APT55M85JFLL
550V 51A
S G D
0.085
S
POWER MOS 7
(R)
R
FREDFET FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
ISOTOP (R)
2 T-
27
"UL Recognized"
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT55M85JFLL UNIT Volts Amps
550 51 204 30 40 521 4.17 -55 to 150 300 51 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
550 51 0.085 250 1000 100 3 5
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 25.5A)
Ohms A nA Volts
3-2003 050-7233 Rev A
Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT55M85JFLL
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 275V ID = 59A @ 25C VGS = 15V VDD = 275V ID = 59A @ 25C RG = 0.6 MIN TYP MAX UNIT pF
6590 1296 91 157 38 86 19 14 41 6
ns nC
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
MIN
TYP
MAX
UNIT Amps Volts V/ns ns
51 204 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
(Body Diode) (VGS = 0V, IS = -51A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -51A, di/dt = 100A/s) Reverse Recovery Charge (IS = -51A, di/dt = 100A/s) Peak Recovery Current (IS = -51A, di/dt = 100A/s)
270 540 1.8 6.2 16 29
C
Amps
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.24 40
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.31mH, R = 25, Peak I = 51A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -51A di/dt 700A/s VR VDSS TJ 150C APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
, THERMAL IMPEDANCE (C/W)
0.9 0.20 0.7 0.15 0.5 Note:
PDM
3-2003
0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE
t1 t2
050-7233 Rev A
JC
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
Z
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
160
RC MODEL
APT55M85JFLL
VGS=15 &10V
ID, DRAIN CURRENT (AMPERES)
Junction temp. ( "C) 0.0528 0.0203F
120
7.5V 7V
Power (Watts)
80 6.5V
0.0651
0.173F
40
6V 5.5V
0.123 Case temperature
0.490F
0
5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
140 120 100 80 60 40 20 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 60 TJ = +125C TJ = +25C TJ = -55C
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.14
V
GS
NORMALIZED TO = 10V @ 29.5A
ID, DRAIN CURRENT (AMPERES)
1.13
1.12
1.10
VGS=10V VGS=20V
1.00 0.90 0.80 0
20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
50
1.10 1.05 1.00
40
30
20
0.95
10 0
0.90 0.85 -50
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
25
2.5
I
D
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
= 29.5A = 10V
V
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
1.1 1.0 0.9 0.8 0.7
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6 -50
050-7233 Rev A
3-2003
204
ID, DRAIN CURRENT (AMPERES)
20,000
OPERATION HERE LIMITED BY RDS (ON)
APT55M85JFLL
Ciss
10,000
100
100S
C, CAPACITANCE (pF)
1,000
Coss
10 1mS TC =+25C TJ =+150C SINGLE PULSE 1 1 5 10 50 100 550 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
100
Crss
10mS
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
10
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
= 59A
200 100 50 TJ =+150C TJ =+25C
14 VDS=110V 12 10 8 6 4 2 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 VDS=275V
VDS=440V
10 5
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3-2003
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
050-7233 Rev A
* Source Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
Gate
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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